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Power Transistors
2SD1752, 2SD1752A
Silicon NPN epitaxial planar type
For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A
q q q q q
Unit: mm
7.00.3 3.00.2 3.50.2
Low collector to emitter saturation voltage VCE(sat) High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings 40 50 20 40 5 20 10 15 1.3 150 -55 to +150 Unit V
7.20.3
0.80.2
s Features
1.10.1
0.850.1 0.40.1
1.00.2
10.0 -0.
+0.3
0.750.1
2.30.2 4.60.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1752 2SD1752A 2SD1752 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.50.2 2.00.2
7.00.3
Unit: mm
0 to 0.15
3.00.2
10.20.3 1.0 max.
Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
A A
1.10.1
2.5
0.750.1
0.5 max.
0.90.1 0 to 0.15
W C
1
2
3
2.30.2
C
4.60.4
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1752 2SD1752A 2SD1752 2SD1752A
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2
*
Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC = 10A, IB = 0.33A IC = 10A, IB = 0.33A VCE = 10V, IC = 0.5A, f = 10MHz VCB = 10V, IE = 0, f = 1MHz IC = 3A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 20V
min
typ
max 50 50 50
Unit A A V
20 40 45 90 260 0.6 1.5 120 200 0.3 0.4 0.1
Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time
*h FE2
VCE(sat) VBE(sat) fT Cob ton tstg tf
V V MHz pF s s s
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
2.50.2
Emitter to base voltage
V
7.20.3
1.0
2.50.2
1.0
emitter voltage 2SD1752A
V
1
Power Transistors
PC -- Ta
20 10 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25C IB=100mA 90mA 80mA 70mA 6 60mA 50mA 40mA 4 30mA 20mA 2 (2) 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 10mA
2SD1752, 2SD1752A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
10
VCE(sat) -- IC
IC/IB=20
Collector power dissipation PC (W)
Collector current IC (A)
15
(1)
8
3 TC=100C 1 25C 0.3 -25C 0.1
10
5
0.03
0.01 0.1
0.3
1
3
10
30
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
10 IC/IB=20 1000
hFE -- IC
1000 VCE=2V
fT -- IC
VCE=10V f=1MHz TC=25C
Forward current transfer ratio hFE
3 25C -25C TC=100C
300 TC=100C 100 25C -25C 30
Transition frequency fT (MHz)
3 10 30
300 100 30 10 3 1 0.3 0.1 0.01 0.03
1
0.3
0.1
10
0.03
3
0.01 0.1
0.3
1
3
10
30
1 0.1
0.3
1
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
ton, tstg, tf -- IC
100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=30(IB1=-IB2) VCC=20V TC=25C
Area of safe operation (ASO)
100 30 ICP Non repetitive pulse TC=25C t=10ms
Switching time ton,tstg,tf (s)
Collector current IC (A)
10 3 1 0.3 0.1 0.03 0.01 0 1 2
10 3
IC 1ms 300ms
ton tstg tf
1 0.3 0.1 0.03 0.01
3
4
5
1
3
10
30
2SD1752A
100
2SD1752
300
1000
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
103 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink
2SD1752, 2SD1752A
Thermal resistance Rth(t) (C/W)
102
(1) (2)
10
1
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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2001 MAR

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